MEMBER
Patent Attorney Partner
KenichiKATAYAMA
Patent Attorney Partner
KenichiKATAYAMA
He worked in the chemical company where he spent 16 years working on the research and development of electronic materials. During that time, he carried out scientific research works as a visiting scientist at National Institute of Advanced Industrial Science and Technology and North Carolina State University in US. In July 1993, he has received his Ph D. from Osaka University.After registered in 2000 as Japanese Patent Attorney he has been engaged not only domestic and foreign applications but also many disputes (appeals and litigation) at a patent firm and a law firm.
He also has research experience in competition law at the Graduate School of Business Sciences, University of Tsukuba (Doctoral degree, 2010).
Profile
- Practice Areas
-
・Patents (semiconductor devices, display devices, optoelectronics, optics, magnetic recording technology, ceramics, materials technology, analytical evaluation technology, software, etc.)
・IP Disputes (Appeals, Litigations)
- Background
-
- 1984
- Master (Science in Physics) Tohoku University, Graduate School of Science
- 1984
- Showa Denko K.K.
- 1984-1986
- National Institute of Advanced Industrial Science and Technology Visiting Researcher
- 1990-1992
- Physical Engineering Departments College of Engineering North Carolina State University in US as Visiting Researcher
- 2000
- Registered as Patent Attorney
- 2000
- TMI Associates
- 2001
- TANI & ABE, p.c.
- 2004
- Ohno & Partners
- 2019
- Sakamoto & Partners Vice-President
- 2020
- Nexel Partners
- Publication
/Seminars -
・K. Katayama
“Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering Tomography” Jpn. J. Appl. Phys. 29 (1990) L198
・K. Katayama, Y. Kirino & F. Shimura
“Non-contact Characterization for Energy Level Related to Silicon Wafer Surface” in “Defects in Silicon II” (Eds. W. M. Bullis, U. Goesele & F. Shimura, The Electrochemical Society, Pennington, NJ, 1991) pp.89
・K. Katayama & F. Shimura
“LM-DLTS Measurements for CZ Silicon Wafers with Different [Oi], [Cs] & Thermal History” in “Defects in Silicon II”(Eds. W. M. Bullis, U. Goesele & F. Shimura, The Electrochemical Society, Pennington, NJ, 1991) pp.97
・K. Katayama, Y. Kirino & F. Shimura
“Effects of Ultraviolet Light Irradiation on Non-contact Microwave Lifetime Measurement” Jpn. J. Appl. Phys. 30B (1991) L1907
・J. Partanen, T. Tuomi & K. Katayama
“Comparison of Defect Images & Density Between Synchrotron Section
Topography & Infrared Light Scattering Microscopy in Heat Treated Czochralski Silicon Crystals” J. Electrochem. Soc. 139 (1992) 599
・K. Katayama & F. Shimura
“Non-contact Defect Characterization for CZ Silicon Crystals with FT-IR, LM-Lifetime, LM-DLTS & Light Scattering Tomography” in “Diagnostic Techniques for Semiconductor Materials & Devices” (Eds. J. Benton, G. Maracas & P. Rai-Choudhury, The Electrochemical Society, Pennington, NJ, 1992) pp.184
・K. Katayama & F. Shimura
“Non-contact Characterization for Ultraviolet Light Irradiation Effect on Si-SiO2 Interface” Jpn. J. Appl. Phys. 8A (1992) L1001
・A. Buczkowski, K. Katayama, G. A. Rozgonyi & F. Shimura
“Non-contact Mobility Measurement with a Laser/Microwave Photoconductance Technique: Temperature Dependence” Appl. Phys. Lett. 60 (1992) 1229
・L. Zhong, A. Buczkowski, K. Katayama & F. Shimura
“Transient Recovery of Minority-Carrier Lifetime in Silicon After Ultraviolet Irradiation” Appl. Phys. Lett. 61 (1992) 931
・K. Katayama & F. Shimura
“Noncontact Characterization for Ultraviolet Light Irradiation on Si-SiO2 Interface” in “Defects Engineering in Semiconductor Growth, Processing & Device Technology” (Eds. S. Ashok, J. Chevallier, K. Sumino & E. Weber, Materials Research Society, Pittsburgh, 1992)
・K. Katayama, A. Agawal, Z. J. Radzimski & F. Shimura
“Investigation on Defects in CZ Silicon with High-Sensitive Laser/Microwave Photoconductance Technique” Jpn. J. Appl. Phys. 32 (1993) 298
・K. Katayama & F. Shimura
“Noncontact Characterization for Carrier Recombination Center Related to Si-SiO2 Interface” Jpn. J. Appl. Phys. 32 (1993) L395
・2013 JPAA IP Practitioners Seminar in Bangkok, Thailand Lecturer
・2015 JPAA IP Practitioners Seminar in Jakarta, Indonesia Lecturer
・2017 JPAA IP Practitioners Seminar in Hanoi, Vietnam Lecturer
- Activities
-
- 2002
- Japan Patent Attorneys Association International Activities Committee Member
- 2003-2004
- Japan Patent Attorneys Association Training Institute Member
- 2008
- Industrial Competitiveness Promotion Committee Member
- 2012-2020
- Japan Patent Attorneys Association International Activity Center Member
- 2013
- Japan Patent Attorneys Association Delegation to Europe 2014 Member
- 2014
- ”Symposium on the topic of the practice around Art. 123(2) EPC” Representative of Japan Patent Attorneys Association
- 2015
- Japan Patent Attorneys Association Leader of Delegation to Europe
- Language
- Japanese・English